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BSO303SP

Infineon Technologies

Product No:

BSO303SP

Manufacturer:

Infineon Technologies

Package:

PG-DSO-8-1

Batch:

-

Datasheet:

-

Description:

P-CHANNEL POWER MOSFET

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 2330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 21mOhm @ 9.1A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 100µA
Supplier Device Package PG-DSO-8-1
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 1.56W (Ta)
Series OptiMOS® -P
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 7.2A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk