BSC882N03LS G

Infineon Technologies

Product No:

BSC882N03LS G

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Package:

PG-TDSON-8-6

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Description:

N-CHANNEL POWER MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3700 pF @ 15 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.2mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 250µA
Supplier Device Package	PG-TDSON-8-6
Drain to Source Voltage (Vdss)	34 V
Power Dissipation (Max)	-
Series	OptiMOS™3 M
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	-
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk