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BSC883N03MSG

Infineon Technologies

Product No:

BSC883N03MSG

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.8mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Supplier Device Package PG-TDSON-8
Drain to Source Voltage (Vdss) 34 V
Power Dissipation (Max) 2.5W (Ta), 57W (Tc)
Series OptiMOS™3M
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 98A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk