BSC200P03LSG

Infineon Technologies

Product No:

BSC200P03LSG

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Package:

PG-TDSON-8-6

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Description:

P-CHANNEL POWER MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	2430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	48.5 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	20mOhm @ 12.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 100µA
Supplier Device Package	PG-TDSON-8-6
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2.5W (Ta), 63W (Tc)
Series	OptiMOS®
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	9.9A (Ta), 12.5A (Tc)
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk