BUK6E2R3-40C,127

NXP Semiconductors

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BUK6E2R3-40C,127

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I2PAK

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NEXPERIA BUK6E2R3-40C - 120A, 40

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	15100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	260 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.3mOhm @ 25A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.8V @ 1mA
Supplier Device Package	I2PAK
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	306W (Tc)
Series	Automotive, AEC-Q101, TrenchMOS™
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Mfr	NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk