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BUK9675-100A,118

NXP Semiconductors

Product No:

BUK9675-100A,118

Manufacturer:

NXP Semiconductors

Package:

D2PAK

Batch:

-

Datasheet:

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Description:

NEXPERIA BUK9675 - N-CHANNEL MOS

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1704 pF @ 25 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 72mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 1mA
Supplier Device Package D2PAK
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 99W (Tc)
Series Automotive, AEC-Q101, TrenchMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Mfr NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Vgs (Max) ±15V
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Package Bulk