PH3120L,115

NXP Semiconductors

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PH3120L,115

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Package:

LFPAK56, Power-SO8

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NEXPERIA PH3120L - 100A, 20V, 0.

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4457 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	48.5 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.65mOhm @ 25A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 1mA
Supplier Device Package	LFPAK56, Power-SO8
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	62.5W (Tc)
Series	TrenchMOS™
Package / Case	SC-100, SOT-669
Technology	MOSFET (Metal Oxide)
Mfr	NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk