PHD71NQ03LT,118

NXP Semiconductors

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PHD71NQ03LT,118

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DPAK

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NEXPERIA PHD71NQ03LT - TRANSISTO

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	13.2 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	10mOhm @ 25A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	DPAK
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	120W (Tc)
Series	TrenchMOS™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Package	Bulk