PHB29N08T,118

NXP Semiconductors

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PHB29N08T,118

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D2PAK

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NEXPERIA PHB29N08T - 27A, 75V, 0

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	50mOhm @ 14A, 11V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 2mA
Supplier Device Package	D2PAK
Drain to Source Voltage (Vdss)	75 V
Power Dissipation (Max)	88W (Tc)
Series	TrenchMOS™
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C	27A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	11V
Package	Bulk