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GT10J312(Q)

Toshiba Semiconductor and Storage

Product No:

GT10J312(Q)

Package:

TO-220SM

Batch:

-

Datasheet:

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Description:

IGBT 600V 10A 60W TO220SM

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
Input Type Standard
Test Condition 300V, 10A, 100Ohm, 15V
Reverse Recovery Time (trr) 200 ns
Switching Energy -
Current - Collector (Ic) (Max) 10 A
Mounting Type Surface Mount
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V
Supplier Device Package TO-220SM
Td (on/off) @ 25°C 400ns/400ns
Current - Collector Pulsed (Icm) 20 A
Series -
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Power - Max 60 W
Mfr Toshiba Semiconductor and Storage
Package Tube
IGBT Type -
Base Product Number GT10J312