GT30J121(Q)

Toshiba Semiconductor and Storage

Product No:

GT30J121(Q)

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TO-3P(N)

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Description:

IGBT 600V 30A 170W TO3PN

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Input Type	Standard
Test Condition	300V, 30A, 24Ohm, 15V
Switching Energy	1mJ (on), 800µJ (off)
Current - Collector (Ic) (Max)	30 A
Mounting Type	Through Hole
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	600 V
Supplier Device Package	TO-3P(N)
Td (on/off) @ 25°C	90ns/300ns
Current - Collector Pulsed (Icm)	60 A
Series	-
Vce(on) (Max) @ Vge, Ic	2.45V @ 15V, 30A
Package / Case	TO-3P-3, SC-65-3
Power - Max	170 W
Mfr	Toshiba Semiconductor and Storage
Package	Tube
IGBT Type	-
Base Product Number	GT30J121