Toshiba Semiconductor and Storage
Product No:
GT20J341,S4X(S
Manufacturer:
Package:
TO-220SIS
Batch:
-
Datasheet:
-
Description:
DISCRETE IGBT TRANSISTOR TO-220S
Quantity:
Delivery:
Payment:
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Operating Temperature | 150°C (TJ) |
Input Type | Standard |
Test Condition | 300V, 20A, 33Ohm, 15V |
Reverse Recovery Time (trr) | 90 ns |
Switching Energy | 500µJ (on), 400µJ (off) |
Current - Collector (Ic) (Max) | 20 A |
Mounting Type | Through Hole |
Product Status | Active |
Voltage - Collector Emitter Breakdown (Max) | 600 V |
Supplier Device Package | TO-220SIS |
Td (on/off) @ 25°C | 60ns/240ns |
Current - Collector Pulsed (Icm) | 80 A |
Series | - |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 20A |
Package / Case | TO-220-3 Full Pack |
Power - Max | 45 W |
Mfr | Toshiba Semiconductor and Storage |
Package | Tube |
IGBT Type | - |