GT15J341,S4X

Toshiba Semiconductor and Storage

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GT15J341,S4X

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Package:

TO-220SIS

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Description:

PB-F DISCRETE IGBT TRANSISTOR TO

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Operating Temperature	150°C (TJ)
Input Type	Standard
Test Condition	300V, 15A, 33Ohm, 15V
Reverse Recovery Time (trr)	80 ns
Switching Energy	300µJ (on), 300µJ (off)
Current - Collector (Ic) (Max)	15 A
Mounting Type	Through Hole
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	600 V
Supplier Device Package	TO-220SIS
Td (on/off) @ 25°C	60ns/170ns
Current - Collector Pulsed (Icm)	60 A
Series	-
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 15A
Package / Case	TO-220-3 Full Pack
Power - Max	30 W
Mfr	Toshiba Semiconductor and Storage
Package	Tube
IGBT Type	-