Toshiba Semiconductor and Storage
Product No:
GT30J65MRB,S1E
Manufacturer:
Package:
TO-3P(N)
Batch:
-
Datasheet:
-
Description:
650V SILICON N-CHANNEL IGBT, TO-
Quantity:
Delivery:
Payment:
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Operating Temperature | 175°C (TJ) |
Input Type | Standard |
Test Condition | 400V, 15A, 56Ohm, 15V |
Reverse Recovery Time (trr) | 200 ns |
Switching Energy | 1.4mJ (on), 220µJ (off) |
Current - Collector (Ic) (Max) | 60 A |
Mounting Type | Through Hole |
Product Status | Active |
Voltage - Collector Emitter Breakdown (Max) | 650 V |
Supplier Device Package | TO-3P(N) |
Td (on/off) @ 25°C | 75ns/400ns |
Series | - |
Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 30A |
Gate Charge | 70 nC |
Package / Case | TO-3P-3, SC-65-3 |
Power - Max | 200 W |
Mfr | Toshiba Semiconductor and Storage |
Package | Tube |
IGBT Type | - |
Base Product Number | GT30J65 |