GT60N321(Q)

Toshiba Semiconductor and Storage

Product No:

GT60N321(Q)

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Package:

TO-3P(LH)

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Description:

IGBT 1000V 60A 170W TO3P LH

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Operating Temperature	150°C (TJ)
Input Type	Standard
Test Condition	-
Reverse Recovery Time (trr)	2.5 µs
Switching Energy	-
Current - Collector (Ic) (Max)	60 A
Mounting Type	Through Hole
Product Status	Obsolete
Voltage - Collector Emitter Breakdown (Max)	1000 V
Supplier Device Package	TO-3P(LH)
Td (on/off) @ 25°C	330ns/700ns
Current - Collector Pulsed (Icm)	120 A
Series	-
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 60A
Package / Case	TO-3PL
Power - Max	170 W
Mfr	Toshiba Semiconductor and Storage
Package	Tube
IGBT Type	-
Base Product Number	GT60N321