SSM3J338R,LF

Toshiba Semiconductor and Storage

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SSM3J338R,LF

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SOT-23F

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Description:

MOSFET P-CH 12V 6A SOT23F

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1400 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs	19.5 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	17.6mOhm @ 6A, 8V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 1mA
Supplier Device Package	SOT-23F
Drain to Source Voltage (Vdss)	12 V
Power Dissipation (Max)	1W (Ta)
Series	U-MOSVII
Package / Case	SOT-23-3 Flat Leads
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 8V
Package	Tape & Reel (TR)
Base Product Number	SSM3J338