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SSM3K329R,LF

Toshiba Semiconductor and Storage

Product No:

SSM3K329R,LF

Package:

SOT-23F

Batch:

-

Datasheet:

-

Description:

MOSFET N CH 30V 3.5A 2-3Z1A

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 123 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 1.5 nC @ 4 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 126mOhm @ 1A, 4V
Product Status Active
Vgs(th) (Max) @ Id 1V @ 1mA
Supplier Device Package SOT-23F
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 1W (Ta)
Series U-MOSIII
Package / Case SOT-23-3 Flat Leads
Technology MOSFET (Metal Oxide)
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta)
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V
Package Tape & Reel (TR)
Base Product Number SSM3K329