minImg

TK10J80E,S1E

Toshiba Semiconductor and Storage

Product No:

TK10J80E,S1E

Package:

TO-3P(N)

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 800V 10A TO3P

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03 Certif04 Certif10

Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 1Ohm @ 5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Supplier Device Package TO-3P(N)
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 250W (Tc)
Series π-MOSVIII
Package / Case TO-3P-3, SC-65-3
Technology MOSFET (Metal Oxide)
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TK10J80