Toshiba Semiconductor and Storage
Product No:
TK10J80E,S1E
Manufacturer:
Package:
TO-3P(N)
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 800V 10A TO3P
Quantity:
Delivery:
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Operating Temperature | 150°C (TJ) |
FET Feature | - |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 1Ohm @ 5A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Supplier Device Package | TO-3P(N) |
Drain to Source Voltage (Vdss) | 800 V |
Power Dissipation (Max) | 250W (Tc) |
Series | π-MOSVIII |
Package / Case | TO-3P-3, SC-65-3 |
Technology | MOSFET (Metal Oxide) |
Mfr | Toshiba Semiconductor and Storage |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
Vgs (Max) | ±30V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tube |
Base Product Number | TK10J80 |