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TK14G65W,RQ

Toshiba Semiconductor and Storage

Product No:

TK14G65W,RQ

Package:

D2PAK

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 13.7A D2PAK

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 250mOhm @ 6.9A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 690µA
Supplier Device Package D2PAK
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 130W (Tc)
Series DTMOSIV
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 13.7A (Ta)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number TK14G65