SSM3J356R,LF

Toshiba Semiconductor and Storage

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SSM3J356R,LF

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Package:

SOT-23F

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Description:

MOSFET P-CH 60V 2A SOT-23F

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	330 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	8.3 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	300mOhm @ 1A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 1mA
Supplier Device Package	SOT-23F
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	1W (Ta)
Series	U-MOSVI
Package / Case	SOT-23-3 Flat Leads
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Vgs (Max)	+10V, -20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR)
Base Product Number	SSM3J356