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2SJ168TE85LF

Toshiba Semiconductor and Storage

Product No:

2SJ168TE85LF

Package:

SC-59

Batch:

-

Datasheet:

-

Description:

MOSFET P-CH 60V 200MA SC59

Quantity:

Delivery:

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Payment:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 85 pF @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2Ohm @ 50mA, 10V
Product Status Active
Vgs(th) (Max) @ Id -
Supplier Device Package SC-59
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 200mW (Ta)
Series -
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 200mA (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number 2SJ168