2SJ304(F)

Toshiba Semiconductor and Storage

Product No:

2SJ304(F)

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Package:

TO-220NIS

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Description:

MOSFET P-CH 60V 14A TO220NIS

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	120mOhm @ 7A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 1mA
Supplier Device Package	TO-220NIS
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	40W (Tc)
Series	-
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	14A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Bulk
Base Product Number	2SJ304