2SJ360(TE12L,F)

Toshiba Semiconductor and Storage

Product No:

2SJ360(TE12L,F)

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Package:

PW-MINI

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Description:

MOSFET P-CH 60V 1A PW-MINI

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	155 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	6.5 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	730mOhm @ 500mA, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 1mA
Supplier Device Package	PW-MINI
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	500mW (Ta)
Series	-
Package / Case	TO-243AA
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR)
Base Product Number	2SJ360