Toshiba Semiconductor and Storage
Product No:
2SK3700(F)
Manufacturer:
Package:
TO-3P(N)
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 900V 5A TO3P
Quantity:
Delivery:
Payment:
Please send RFQ , we will respond immediately.
Operating Temperature | 150°C (TJ) |
FET Feature | - |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 2.5Ohm @ 3A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Supplier Device Package | TO-3P(N) |
Drain to Source Voltage (Vdss) | 900 V |
Power Dissipation (Max) | 150W (Tc) |
Series | - |
Package / Case | TO-3P-3, SC-65-3 |
Technology | MOSFET (Metal Oxide) |
Mfr | Toshiba Semiconductor and Storage |
Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
Package | Bulk |
Base Product Number | 2SK3700 |