IAUA250N04S6N007AUMA1

Infineon Technologies

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PG-HSOF-5-4

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MOSFET_(20V 40V) PG-HSOF-5

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	9898 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	151 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	0.7mOhm @ 100A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	3V @ 130µA
Supplier Device Package	PG-HSOF-5-4
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	250W (Tc)
Series	OptiMOS™
Package / Case	5-PowerSFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	435A (Tj)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Package	Tape & Reel (TR)
Base Product Number	IAUA250