IAUC120N04S6N013ATMA1

Infineon Technologies

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PG-TDSON-8

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IAUC120N04S6N013ATMA1

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	68 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.34mOhm @ 60A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 60µA
Supplier Device Package	PG-TDSON-8
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	115W (Tc)
Series	Automotive, AEC-Q101, OptiMOS™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Package	Tape & Reel (TR)
Base Product Number	IAUC120