IAUC41N06S5L100ATMA1

Infineon Technologies

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PG-TDSON-8-33

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MOSFET N-CH 60V 41A TDSON-8-33

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1205 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	16.4 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	10mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 13µA
Supplier Device Package	PG-TDSON-8-33
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	42W (Tc)
Series	OptiMOS™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	41A (Tj)
Vgs (Max)	±16V
Package	Tape & Reel (TR)
Base Product Number	IAUC41