IMBF170R1K0M1XTMA1

Infineon Technologies

Product No:

IMBF170R1K0M1XTMA1

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Package:

PG-TO263-7-13

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Description:

SICFET N-CH 1700V 5.2A TO263-7

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	275 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs	5 nC @ 12 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1000mOhm @ 1A, 15V
Product Status	Active
Vgs(th) (Max) @ Id	5.7V @ 1.1mA
Supplier Device Package	PG-TO263-7-13
Drain to Source Voltage (Vdss)	1700 V
Power Dissipation (Max)	68W (Tc)
Series	CoolSiC™
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiCFET (Silicon Carbide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	5.2A (Tc)
Vgs (Max)	+20V, -10V
Drive Voltage (Max Rds On, Min Rds On)	12V, 15V
Package	Tape & Reel (TR)
Base Product Number	IMBF170