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IMT65R022M1HXUMA1

Infineon Technologies

Product No:

IMT65R022M1HXUMA1

Manufacturer:

Infineon Technologies

Package:

PG-HSOF-8-1

Batch:

-

Datasheet:

-

Description:

SILICON CARBIDE MOSFET

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -
FET Feature -
FET Type -
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs -
Product Status Active
Vgs(th) (Max) @ Id -
Supplier Device Package PG-HSOF-8-1
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) -
Series CoolSiC™
Package / Case 8-PowerSFN
Technology SiCFET (Silicon Carbide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C -
Vgs (Max) -
Drive Voltage (Max Rds On, Min Rds On) 18V
Package Tape & Reel (TR)