IMW65R048M1HXKSA1

Infineon Technologies

Product No:

IMW65R048M1HXKSA1

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Package:

PG-TO247-3-41

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Description:

MOSFET 650V NCH SIC TRENCH

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1118 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	64mOhm @ 20.1A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	5.7V @ 6mA
Supplier Device Package	PG-TO247-3-41
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	125W (Tc)
Series	CoolSIC™ M1
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	39A (Tc)
Vgs (Max)	+23V, -5V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube
Base Product Number	IMW65R048