IMYH200R012M1HXKSA1

Infineon Technologies

Product No:

IMYH200R012M1HXKSA1

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Package:

PG-TO247-4-U04

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SIC DISCRETE

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	246 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	16.5mOhm @ 60A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	5.5V @ 48mA
Supplier Device Package	PG-TO247-4-U04
Drain to Source Voltage (Vdss)	2000 V
Power Dissipation (Max)	552W (Tc)
Series	CoolSiC™
Package / Case	TO-247-4
Technology	SiC (Silicon Carbide Junction Transistor)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	123A (Tc)
Vgs (Max)	+20V, -7V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Package	Tube
Base Product Number	IMYH200