IPA029N06NXKSA1

Infineon Technologies

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IPA029N06NXKSA1

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Package:

PG-TO220-FP

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Description:

MOSFET N-CH 60V 84A TO220-FP

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5125 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	66 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.9mOhm @ 84A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.3V @ 75µA
Supplier Device Package	PG-TO220-FP
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	38W (Tc)
Series	OptiMOS™
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	84A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tube
Base Product Number	IPA029