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IPA180N10N3G

Infineon Technologies

Product No:

IPA180N10N3G

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3-111

Batch:

-

Datasheet:

-

Description:

28A, 100V, 0.018OHM, N-CHANNEL,

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 18mOhm @ 28A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 35µA
Supplier Device Package PG-TO220-3-111
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 30W (Tc)
Series OptiMOS™ 3
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Bulk