IPB120N04S4L02ATMA1

Infineon Technologies

Product No:

IPB120N04S4L02ATMA1

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Package:

PG-TO263-3

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Description:

MOSFET N-CH 40V 120A D2PAK

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	14560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	190 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.7mOhm @ 100A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 110µA
Supplier Device Package	PG-TO263-3
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	158W (Tc)
Series	Automotive, AEC-Q101, OptiMOS™
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Vgs (Max)	+20V, -16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	IPB120