IPB65R090CFD7ATMA1

Infineon Technologies

Product No:

IPB65R090CFD7ATMA1

Manufacturer:

Package:

PG-TO263-3

Batch:

Datasheet:

Description:

HIGH POWER_NEW

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2513 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	53 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	90mOhm @ 12.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 630µA
Supplier Device Package	PG-TO263-3
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	127W (Tc)
Series	CoolMOS™ CFD7
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPB65R