IPB65R190C7ATMA1

Infineon Technologies

Product No:

IPB65R190C7ATMA1

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Package:

PG-TO263-3

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Description:

MOSFET N-CH 650V 13A D2PAK

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1150 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	190mOhm @ 5.7A, 10V
Product Status	Discontinued at Digi-Key
Vgs(th) (Max) @ Id	4V @ 290µA
Supplier Device Package	PG-TO263-3
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	72W (Tc)
Series	CoolMOS™ C7
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPB65R