IPB80N04S3-04

Infineon Technologies

Product No:

IPB80N04S3-04

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Package:

PG-TO263-3-1

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Description:

MOSFET N-CH 40V 80A TO263-3

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.1mOhm @ 80A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 90µA
Supplier Device Package	PG-TO263-3-1
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	136W (Tc)
Series	Automotive, AEC-Q101, OptiMOS™
Package / Case	TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Vgs (Max)	±20V
Package	Bulk