IPBE65R230CFD7AATMA1

Infineon Technologies

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PG-TO263-7-3-10

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MOSFET N-CH 650V 11A TO263-7

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1044 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	230mOhm @ 5.2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 260µA
Supplier Device Package	PG-TO263-7-3-10
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	63W (Tc)
Series	Automotive, AEC-Q101, CoolMOS™ CFD7A
Package / Case	TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPBE65