IPC218N04N3X7SA1

Infineon Technologies

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IPC218N04N3X7SA1

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Die

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MV POWER MOS

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Operating Temperature	-
FET Feature	-
FET Type	N-Channel
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	50mOhm @ 2A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	4V @ 200µA
Supplier Device Package	Die
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	-
Series	OptiMOS™ 3
Package / Case	Die
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	-
Vgs (Max)	-
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk
Base Product Number	IPC218