IPC313N10N3RX1SA2

Infineon Technologies

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IPC313N10N3RX1SA2

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Die

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Description:

TRENCH >=100V

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Operating Temperature	-
FET Feature	-
FET Type	N-Channel
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	100mOhm @ 2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 275µA
Supplier Device Package	Die
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	-
Series	OptiMOS™ 3
Package / Case	Die
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	-
Vgs (Max)	-
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)