IPC50N04S55R8ATMA1

Infineon Technologies

Product No:

IPC50N04S55R8ATMA1

Manufacturer:

Package:

PG-TDSON-8-33

Batch:

Datasheet:

Description:

MOSFET N-CH 40V 50A 8TDSON-33

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1090 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5.8mOhm @ 25A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	3.4V @ 13µA
Supplier Device Package	PG-TDSON-8-33
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	42W (Tc)
Series	OptiMOS™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Package	Tape & Reel (TR)
Base Product Number	IPC50N