IPD040N08NF2SATMA1

Infineon Technologies

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IPD040N08NF2SATMA1

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PG-TO252-3

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Description:

MOSFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	81 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4mOhm @ 70A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.8V @ 85µA
Supplier Device Package	PG-TO252-3
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	3W (Ta), 150W (Tc)
Series	StrongIRFET™ 2
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	20A (Ta), 129A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Cut Tape (CT)