IPD30N06S4L23ATMA2

Infineon Technologies

Product No:

IPD30N06S4L23ATMA2

Manufacturer:

Package:

PG-TO252-3-11

Batch:

Datasheet:

Description:

MOSFET N-CH 60V 30A TO252-31

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	23mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 10µA
Supplier Device Package	PG-TO252-3-11
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	36W (Tc)
Series	Automotive, AEC-Q101, OptiMOS™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	IPD30N06