IPD50P04P413ATMA1

Infineon Technologies

Product No:

IPD50P04P413ATMA1

Manufacturer:

Package:

PG-TO252-3-313

Batch:

Datasheet:

Description:

MOSFET P-CH 40V 50A TO252-3

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	3670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	51 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	12.6mOhm @ 50A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	4V @ 85µA
Supplier Device Package	PG-TO252-3-313
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	58W (Tc)
Series	OptiMOS™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPD50