IPD50R800CE

Infineon Technologies

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IPD50R800CE

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Package:

PG-TO252-3-344

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Description:

IPD50R800 - 500V COOLMOS N-CHANN

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	280 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	12.4 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	800mOhm @ 1.5A, 13V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 130µA
Supplier Device Package	PG-TO252-3-344
Drain to Source Voltage (Vdss)	500 V
Power Dissipation (Max)	60W (Tc)
Series	CoolMOS™ CE
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	7.6A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	13V
Package	Bulk
Base Product Number	IPD50