IPD65R250E6

Infineon Technologies

Product No:

IPD65R250E6

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Package:

PG-TO252

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Description:

N-CHANNEL POWER MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	250mOhm @ 4.4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 400µA
Supplier Device Package	PG-TO252
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	208W (Tc)
Series	CoolMOS E6™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	16.1A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk