IPD65R650CEATMA1

Infineon Technologies

Product No:

IPD65R650CEATMA1

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Package:

PG-TO252-3

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Description:

MOSFET N-CH 650V 10.1A TO252-3

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	650mOhm @ 2.1A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.5V @ 210µA
Supplier Device Package	PG-TO252-3
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	86W (Tc)
Series	CoolMOS™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	10.1A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPD65R