IPD80R2K7C3AATMA1

Infineon Technologies

Product No:

IPD80R2K7C3AATMA1

Manufacturer:

Package:

D-Pak

Batch:

Datasheet:

Description:

MOSFET N-CH TO252-3

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	290 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	1.5 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.7Ohm @ 1.2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.9V @ 250µA
Supplier Device Package	D-Pak
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	42W (Tc)
Series	Automotive, AEC-Q101, CoolMOS™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPD80R2