IPDD60R190G7XTMA1

Infineon Technologies

Product No:

IPDD60R190G7XTMA1

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Package:

PG-HDSOP-10-1

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Description:

MOSFET N-CH 600V 13A HDSOP-10

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	718 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	190mOhm @ 4.2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 210µA
Supplier Device Package	PG-HDSOP-10-1
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	76W (Tc)
Series	CoolMOS™ G7
Package / Case	10-PowerSOP Module
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPDD60