IPF042N10NF2SATMA1

Infineon Technologies

Product No:

IPF042N10NF2SATMA1

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Package:

PG-TO263-7

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Description:

MOSFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	85 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.25mOhm @ 80A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.8V @ 93µA
Supplier Device Package	PG-TO263-7
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	3.8W (Ta), 167W (Tc)
Series	StrongIRFET™ 2
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	21A (Ta), 139A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)